Molecular beam epitaxy of KTaO₃

Basics of Molecular Beam Epitaxy (MBE)

A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...

Effects of hydrogen during molecular beam epitaxy of GaN

Growth of nanoscale BaTiO3/SrTiO3 superlattices by molecular-beam epitaxy

Same as Report (SAR) 18. NUMBER

Molecular Beam Epitaxy of Ii-vi Compound Waveguides

IConllnv on r...r.. •Idm II n.c....ry and Idtnllly by block numb.r) Thin films ot ZnSe, ZnTe, Zn(SeTe), Cd(SeTe) and CdTe were grown on CdS, CdSe, CaF,, and sapphire substrates by evaporation of the elements under ultra-high vacuum. Substrate chemical polishing techniques were developed:. Elemental and compound evaporation and deposition rates were measured by mass spectrometer, film thickness,...